JPH0534115Y2 - - Google Patents

Info

Publication number
JPH0534115Y2
JPH0534115Y2 JP1990119694U JP11969490U JPH0534115Y2 JP H0534115 Y2 JPH0534115 Y2 JP H0534115Y2 JP 1990119694 U JP1990119694 U JP 1990119694U JP 11969490 U JP11969490 U JP 11969490U JP H0534115 Y2 JPH0534115 Y2 JP H0534115Y2
Authority
JP
Japan
Prior art keywords
cmos
semiconductor substrate
channel transistor
transistor
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1990119694U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0395665U (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990119694U priority Critical patent/JPH0534115Y2/ja
Publication of JPH0395665U publication Critical patent/JPH0395665U/ja
Application granted granted Critical
Publication of JPH0534115Y2 publication Critical patent/JPH0534115Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1990119694U 1990-11-15 1990-11-15 Expired - Lifetime JPH0534115Y2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990119694U JPH0534115Y2 (en]) 1990-11-15 1990-11-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990119694U JPH0534115Y2 (en]) 1990-11-15 1990-11-15

Publications (2)

Publication Number Publication Date
JPH0395665U JPH0395665U (en]) 1991-09-30
JPH0534115Y2 true JPH0534115Y2 (en]) 1993-08-30

Family

ID=31667802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990119694U Expired - Lifetime JPH0534115Y2 (en]) 1990-11-15 1990-11-15

Country Status (1)

Country Link
JP (1) JPH0534115Y2 (en])

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545392A (en) * 1977-06-15 1979-01-16 Hitachi Ltd Semiconductor integrated circuit and its manufacture
JPS5420679A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Bipolar mos semiconductor integrated circuit device and the same
JPS6015155B2 (ja) * 1978-12-30 1985-04-17 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0395665U (en]) 1991-09-30

Similar Documents

Publication Publication Date Title
JPH0481337B2 (en])
JPH04345064A (ja) 半導体集積回路装置およびその製造方法
KR910006672B1 (ko) 반도체 집적회로 장치 및 그의 제조 방법
JPH0557741B2 (en])
JPH0348458A (ja) Ｂｉ―ＣＭＯＳ集積回路およびその製造方法
JPH0148661B2 (en])
JPH0534115Y2 (en])
JP2575876B2 (ja) 半導体装置
JPS6038856A (ja) 半導体装置及びその製造方法
KR0136915B1 (ko) 레치-업 현상을 방지할 수 있는 바이폴라-씨모스의 제조방법
JPS60211867A (ja) 半導体装置及びその製造方法
JPS61269360A (ja) 半導体装置とその製造方法
JP3040211B2 (ja) 半導体集積回路の製造方法
JPS6043027B2 (ja) 相補形電界効果トランジスタによる集積回路装置の製造方法
JP2953915B2 (ja) 半導体集積回路装置及びその製造方法
JP3175873B2 (ja) 半導体装置の製造方法
JPH0671066B2 (ja) 半導体集積回路装置の製造方法
JPH0481336B2 (en])
JP3333485B2 (ja) 半導体装置の製造方法
JPH07101717B2 (ja) 半導体装置の製造方法
JPH04267554A (ja) ＢｉＭＯＳ半導体装置及びその製造方法
JPH03116774A (ja) 半導体装置の製造方法
JPH0638472B2 (ja) 半導体装置の製造方法
JPH0580155B2 (en])
JPH0640567B2 (ja) 半導体装置の製造方法